MRF6V2010N MRF6V2010Nb 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfets designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 mhz. devices are unmatched and are suitable for use in industrial, medical and scientific applications. ? typical cw performance at 220 mhz: v dd = 50 volts, i dq = 35 ma, p out = 10 watts power gain ? 25 db drain efficiency ? 68% ? capable of handling 10:1 vswr, @ 50 vdc, 210 mhz, 10 watts cw output power features ? integrated esd protection ? excellent thermal stability ? facilitates manual gain control, alc and modulation techniques ? 225 c capable plastic package ? rohs compliant table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +110 vdc gate - source voltage v gs - 0.5, +10 vdc storage temperature range t stg - 65 to +150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature tbd c, tbd w cw case temperature tbd c, tbd w cw r jc tbd tbd c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) tbd (minimum) machine model (per eia/jesd22 - a115) tbd (minimum) charge device model (per jesd22 - c101) tbd (minimum) 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. (calculator available when part is in production.) 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. this document contains information on a preproduction product. specifications and information herein are subject to change with out notice. document number: order from rf marketing rev. 3, 10/2006 freescale semiconductor technical data 10 - 450 mhz, 10 w, 50 v lateral n - channel broadband rf power mosfets MRF6V2010N MRF6V2010Nb case 1265 - 08, style 1 to - 270- 2 plastic MRF6V2010N preproduction case 1337 - 03, style 1 to - 272- 2 plastic MRF6V2010Nb ? freescale semiconductor, inc., 2006. all rights reserved. 4 .com datasheet u
2 rf device data freescale semiconductor MRF6V2010N MRF6V2010Nb table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 110 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 50 vdc, v gs = 0 vdc) i dss ? ? 10 adc drain- source breakdown voltage (i d = 5 ma, v gs = 0 vdc) bv dss 110 ? ? vdc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 10 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 28 adc) v gs(th) ? 2.4 ? vdc drain- source on - voltage (v gs = 10 vdc, i d = 70 madc) v ds(on) ? 0.3 ? vdc dynamic characteristics reverse transfer capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.27 ? pf output capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 6.6 ? pf input capacitance (v ds = 50 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 15 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 50 vdc, i dq = 35 ma, p out = 10 w, f = 220 mhz, cw power gain g ps ? 25 ? db drain efficiency d ? 68 ? % input return loss irl ? -20 ? db p out @ 1 db compression point, cw (f = 220 mhz) p1db ? 11 ? w attention: the MRF6V2010N and MRF6V2010Nb are high power devices and special considerations must be followed in board design and mounting. incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. refer to freescale application note an3263 (for bolt down mounting) or an1907 (for solder reflow mounting) prior to starting system design to ensure proper mounting of these devices. 4 .com datasheet u
MRF6V2010N MRF6V2010Nb 3 rf device data freescale semiconductor package dimensions 4 .com datasheet u
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MRF6V2010N MRF6V2010Nb 9 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: ord er from rf marketing rev. 3, 10/2006 4 .com datasheet u
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